This seminar begins with the main features of the old model used for CdS/CdTe solar cells (Basol ~1982), key experimental evidence led to new ideas and the salient features of the new model published by Dharmadasa et al in December 2002. The presentation then moves on to provide further experimental evidence to support the new model, interpret previously inexplicable results and extends the applicability of the new model to CIGS solar cells. The presentation includes new ways for development of thin film solar cells based on CdTe and CIGS materials.
Gradual development of ideas into multi-layer graded bandgap solar cells, and severe disadvantages of tunnel-junction approach used in tandem solar cells are then presented. The experimental results obtained (Voc = 1170 mV, FF = 0.84-0.87) with well researched material (AlxGa(1-x)As) and new device structures are also presented. The importance of defects in these device structures are highlighted using the latest results observed on these solar cell structures.
Finally, the recent
advances in electrodeposition of semiconductors are presented using results
obtained on CIGS materials and solar cells. The way forward with low-cost solar
cell developments and possible combinations of electrodeposited CIGS cells with
dye sensitised solar cells (DSSC) will be suggested and discussed.