PhD: "Carbonado and the diamond polishing process", Department of Physics, University of Bristol, 1981 with Andrew Lang (now Prof.A.R.Lang FRS). See: C.Jeynes, A proposed diamond polishing process, Phil.Mag. A42 (1983) 169-197 and C.Jeynes, Natural polycrystalline diamond, Ind.Diamond Rev.39 (1978) 14-23
1982: Joined the University
of Surrey Ion
Centre as Liaison Fellow
1989: Promoted to Senior Liaison Fellow
I have long believed that we do not generally get as much
IBA spectra as we could. Our first contribution to more detailed
analysis was a code to fit joined half-Gaussians (JHG) to
(C Jeynes, A C Kimber, High accuracy data from Rutherford
spectra: Measurements of the range and straggling of 60-400 keV As
into Si, J. Phys. D. 18 L93-L97 (1985); A C Kimber, C
An application of the truncated two-piece normal distribution to the
of depths of arsenic implants in silicon. J. Roy. Stat. Soc. C36(3)
There were a number of useful application of this JHG code: U Bangert, P J Goodhew, C Jeynes, I H Wilson, Low energy (2-5 keV) argon damage in silicon, J. Physics. D. 19 (1986) 589-603; R P Webb, C Jeynes, I H Wilson, The effect of angle of incidence on interface broadening, Nuclear Instr. & Methods B13 (1986) 449-452; Z.H.Jafri, C.Jeynes, R.P.Webb, I.H.Wilson, Observation of swelling and sputtering of a Si target under Ar ion irradiation using a double marker technique, Vacuum 39 (1989) 1119-21; Z.H.Jafri, C.Jeynes, R.P.Webb, I.H.Wilson, Mass transport of Silicon during Argon irradiation employing a double marker system, Nucl. Instruments & Methods B48 (1990) 457-460.
I have also used this JHG code participating in a Round Robin to use RBS to measure the thickness of Ta2O5 layers on Ta organised by Martin Seah of the National Physical Laboratory: M P Seah, D David, J A Davies, C Jeynes, C Ortega, C Sofield, G Weber, An intercomparison of absolute measurements of the oxygen and tantalum thickness of Ta2O5 reference materials BCR 261 by Six laboratories, Nucl.Instruments & Methods B30 (1988) 140-51.
We were the first to critically demonstrate 1% absolute accuracy in
determining the stoichiometry of InGaAs films by RBS: C.Jeynes,
Z.H.Jafri, R.P.Webb, M.J.Ashwin, A.C.Kimber, Accurate RBS
measurements of the In content
of InGaAs thin films, Surf.Interface Anal. 25 (1997) 254-260.
In this work we also proposed and demonstrated a simple pulse
pileup calculation that can be incorporated in spectrum simulation.
We have critically demonstrated that, with care, the electronic gain
of the spectroscopy system for standard He RBS can be determined to
0.5%: C.Jeynes, N.P.Barradas, M.J.Blewett,
R.P.Webb, Improved ion beam analysis
facilities at the University of Surrey, Nucl. Instr. and
B136-138 (1998) 1229-1234. It is surprising that in fact it is
difficult to get better than this, and no-one has demonstrated
accuracy. For example, Lennard (et al, NIM B45,
281) in his work on the pulse height deficit of detectors implicitly
the same accuracy.
We first published this work as: N.P.Barradas, C.Jeynes,
Simulated annealing analysis of Rutherford backscattering data, Appl.Phys.Lett.
There is now a large literature on DataFurnace and a full-length Topical Review has been published (C.Jeynes et al J.Phys.D 36, 2003, R97-R126). See the DataFurnace web pages.